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Abstract
A comparative study of SiGe based MOS transistor with single Si and Ge based MOS transistors has been investigated. The objective of this study is to analyze the performance of SiGe MOSFET which shows some significantly better electrical characteristics as compared to the silicon and Germanium channel MOSFET’s. Design, Simulation and analysis of transistors has been performed with the help of Visual TCAD.
Keywords: SiGe, NMOS, Visual TCAD, I-V characteristics.##plugins.themes.academic_pro.article.details##
How to Cite
Srivastava, S., Maurya, L., & Srivastava, V. K. (2014). Comparative Study of SiGe MOSFET with Single Substrate MOSFET Using Visual TCAD. International Journal of Emerging Trends in Science and Technology, 1(04). Retrieved from https://igmpublication.org/ijetst.in/index.php/ijetst/article/view/180
References
[1]http://www.tsmc.com/english/dedicatedFoundry/ technology/mtm.htm
[2] Chaudhry A (2012) Alternate Materials for Nanoscale MOSFETs . J Elec Electron 1:e105. doi:10.4172/2167-101X.1000e105
[3] M. J. Palmer et al.: Effective mobilities in pseudomorphic Si/SiGe/Si p-channel metaloxide- semiconductor field-effect transistors with thin silicon capping layers. Applied Physics Letters, 78, p.1424- 1426, 2001.
[4] T. E. Whall and E. H. C. Parker, “Si Geheterostructures for CMOS technologyâ€, Thin Solid Films 367 250-259, 2000.
[5] D. J. Paul, Silicon Germanium Heterostructures in Electronics:- The Present and the Future, Thin Solid Films 321 172-180 (1998).
[6] Ouellette, Jennifer. "Silicon–Germanium Gives Semiconductors the Edge", The Industrial Physicist 7 July 2009: 22-25 Print
[7] http://www.cogenda.com/article/applications
[2] Chaudhry A (2012) Alternate Materials for Nanoscale MOSFETs . J Elec Electron 1:e105. doi:10.4172/2167-101X.1000e105
[3] M. J. Palmer et al.: Effective mobilities in pseudomorphic Si/SiGe/Si p-channel metaloxide- semiconductor field-effect transistors with thin silicon capping layers. Applied Physics Letters, 78, p.1424- 1426, 2001.
[4] T. E. Whall and E. H. C. Parker, “Si Geheterostructures for CMOS technologyâ€, Thin Solid Films 367 250-259, 2000.
[5] D. J. Paul, Silicon Germanium Heterostructures in Electronics:- The Present and the Future, Thin Solid Films 321 172-180 (1998).
[6] Ouellette, Jennifer. "Silicon–Germanium Gives Semiconductors the Edge", The Industrial Physicist 7 July 2009: 22-25 Print
[7] http://www.cogenda.com/article/applications